BCP53-16T3G 数据手册
其他文档
BCP53-16T3G 5 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi BCP53-16T3G
- Transistor Type: PNP
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 1.5A
- Power Dissipation (Pd): 1.5W
- Transition Frequency (fT): 50MHz
- DC Current Gain (hFE@Ic,Vce): 100@150mA,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
- Package: SOT-223
- Manufacturer: onsemi
- Part id: 535647
